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| BAR 64-03W Silicon PIN Diode l High voltage current controlled RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz Type BAR 64-03W Marking 2 Ordering Code (tape and reel) Q62702-A1045 Pin Configuration Package 1 2 C A SOD-323 1) Maximum Ratings per Diode Parameter Reverse voltage Forward current Total Power dissipation TS 25C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient 1) Symbol BAR 64-03W 200 100 250 150 -55 +150C -55...+150C Unit V mA mW C C C VR IF Ptot Tj Top Tstg Rth JA 450 K/W _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 22.07.94 BAR 64-03W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC Characteristics per Diode Breakdown voltage IR = 5 A Forward voltage IF = 50 mA Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance V(BR) 200 0.23 12.5 2.1 0.85 1.55 2.0 - V V 1.1 pF 0.35 -20 3.8 1.35 s nH - VF CT rf L Ls Semiconductor Group 2 Edition A01, 22.07.94 BAR 64-03W Forward resistance rf= f (IF) f = 100 MHz Diode capacitance CT= f (VR) f = 1 MHz. Forward current IF = f (VF) Semiconductor Group 3 Edition A01, 22.07.94 |
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